BFY180 HiRel NPN Silicon RF Transistor • • • • •
HiRel Discrete and Microwave Semiconductor For low power amplifiers at ...
BFY180 HiRel
NPN Silicon RF
Transistor
HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 01
4
3
1
2
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY180 (ql) (ql) Quality Level: Marking Ordering Code see below Pin Configuration C E B E Package Micro-X1
P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality,
Ordering Code: Ordering Code: Ordering Code: Ordering Code:
Q97301013 on request on request Q97111419
(see order instructions for ordering example)
Semiconductor Group
1 of 5
Draft B, September 99
BFY180
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE=0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 2), 3) TS ≤ 176°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance
Junction-soldering point
3)
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg
Rth JS
Values 8 15 15 2 4 0.5 30 200 -65...+200 -65...+200
1)
Unit V V V V mA mA mW °C °C °C
K/W
< 805
Notes.: 1) The maximum permissible base current for VFBE measurements is 3mA (spotmeasurement duration < 1s) 2) At TS = + 176 °C. For TS > + 176 °C derating is required. 3) TS is measured on the collector lead at ...
