BFY420 HiRel NPN Silicon RF Transistor • • • • • • •
HiRel Discrete and Microwave Semiconductor For High Gain Low Noise ...
BFY420 HiRel
NPN Silicon RF
Transistor
HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 22 GHz SIEGET 25-Line Infineon Technologies Grounded Emitter
Transistor25 GHz fT-Line Space Qualified ESA/SCC Detail Spec. No.: 5611/008 Type Variant No. 02 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY420 (ql) (ql) Quality Level: Marking Ordering Code see below Pin Configuration 1 C 2 E 3 B 4 E Micro-X Package
4
3
1
2
P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality,
Ordering Code: Ordering Code: Ordering Code: Ordering Code:
Q62702F1662 on request on request Q62702F1709
(see order instructions for ordering example)
Semiconductor Group
1 of 5
Draft B, September 99
BFY420
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 1), 2) TS ≤ 129°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 2)
Rth JS < 285 K/W
Symbol VCEO VCBO VEBO IC IB Ptot Tj Top Tstg
Values 4.5 15 1.5 35 3.0 160 175 -65...+175 -65...+175
Unit V V V mA mA mW °C °C °C
Notes.: 1) At TS = + 129 °C. For TS > + 129 °C derating is required. 2) TS is measured on the col...