BFY450

BFY450 HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET 25-Line Infineon Technologies Grounded Emitter Transistor25 GHz fT-Line Space Qualified ESA/SCC Detail Spec. No.: 5611/008 Type Variant No. 03 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY450 (ql) (ql) Quality Level: Marking Ordering Code see below Pin Configuration 1 C 2 E 3 B 4 E Micro-X Package P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: Q62702F1663 on request on request Q62702F1708 (see order instructions for ordering example) Semiconductor Group 1 of 5 Draft B, September 99 BFY450 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 1), 2) TS ≤ 110°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 2) Rth JS < 145 K/W Symbol VCEO VCBO VEBO IC IB Ptot Tj Top Tstg Values 4.5 15 1.5 100 10 450 175 -65...+175 -65...+175 Unit V V V mA mA mW °C °C °C Notes.: 1) At TS = + 110 °C. For TS > + 110 °C derating is required. 2) TS is measured on the collector lead at the sold...