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BFY84 Dataheets PDF



Part Number BFY84
Manufacturers Seme LAB
Logo Seme LAB
Description SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Datasheet BFY84 DatasheetBFY84 Datasheet (PDF)

BFY84 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) SILICON PLANAR EPITAXIAL NPN TRANSISTOR 1.02 (0.040) Max. 12.7 (0.500) Min. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) DESCRIPTION The BFY84 is a six terminal device containing two isolated silicon planar epitaxial NPN transistors in Jedec TO77 metal case. 0.74 (0.029) 1.14 (0.045) 2.54 (0.100) 3 2 4 5 6 1 45˚ 0.71 (0.028) 0.86 (0.034) The good therm.

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BFY84 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) SILICON PLANAR EPITAXIAL NPN TRANSISTOR 1.02 (0.040) Max. 12.7 (0.500) Min. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) DESCRIPTION The BFY84 is a six terminal device containing two isolated silicon planar epitaxial NPN transistors in Jedec TO77 metal case. 0.74 (0.029) 1.14 (0.045) 2.54 (0.100) 3 2 4 5 6 1 45˚ 0.71 (0.028) 0.86 (0.034) The good thermal tracking over a wide current and temperature range, offers the circuit designer matched transistors with specified performance for differential amplifiers. TO77 Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Emitter 1 Pin 4 – Emitter 2 Pin 5 – Base 2 Pin 6 – Collector 2 ABSOLUTE MAXIMUM RATINGS VCBO VCEO VEBO IC Ptot Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Total Dissipation at Tamb £ 25°C (one side) Tamb £ 25°C (both sides) Tcase £ 25°C (one side) Tcase £ 25°C (both sides) Tcase £ 100°C (one side) Tcase £ 100°C (both sides) Tstg,Tj Storage and Junction Temperature 30V 12V 3V 200mA 0.3W 0.38W 0.6W 0.98W 0.34W 0.56W –65 to +200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 5/99 BFY84 THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max One side 292 583 Both Sides 178 460 °C/W °C/W ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter ICBO V(BR)CBO VCEO(sus)* V(BR)EBO VCE(sat) VBE(sat) lVBE1-VBE2l lVBE1-VBE2l ÎT hFE hFE1/hFE2 fT CEBO CCBO NF Collector Cut Off Current Collector Base Breakdown Voltage Collector Emitter Sustaining Voltage Emitter Base Breakdown Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Input Offset Voltage Input Offset Voltage Temperature Coefficient DC Current Gain Matched Pair Ratio Transistion Frequency Emitter Base Capacitance Collector Base Capacitance Noise Figure Test Conditions VCB = 15V VCB = 15V IC = 1mA IC = 3mA IC = 0 IC = 10mA IC = 10mA IC = 3mA IC = 3mA IC = 3mA IC = 3mA IC = 4mA f = 100MHz IC = 0 f = 1MHz IE = 0 f = 1MHz IC =1mA f = 60MHz VCE = 6V VCB = -10V VEB = 0.5V IE = 0 Tamb =150°C IE = 0 IB = 0 IE = 10mA IB = 1mA IB = 1mA VCE = 1V VCE = 1V VCE = 1V VCE = 1V VCE = 10v Min. Typ. Max. 10 1 Unit nA mA V V V 30 12 3 0.4 1 15 25 20 1.25 600 2 1.7 6 V V mV mV/°C — MHz pF pF dB * Pulse test tp = 300ms , Duty Cycle = 1% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 5/99 .


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