BG3140

BG3140... DUAL N-Channel MOSFET Tetrode 4 5 6 Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage Two AGC amplifiers in one single package Integrated gate protection diodes Low noise figure High gain, high forward transadmittance Improved cross modulation at gain reduction High AGC-range BG3140 6 5 4 2 1 3 VPS05604 BG3140R 6 5 4 Drain AGC HF Input G2 G1 R G1 VGG HF Output + DC B A B 2 3 1 1 A 2 3 GND EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BG3140 BG3140R Package SOT363 SOT363 1=G1 1=G1 2=G2 2=S Pin Configuration 3=D 3=D 4=D 4=D 5=S 5=G2 6=G1 6=G1 Marking KDs KKs 180° rotated tape loading orientation available Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation, TS ≤78°C Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point1) Symbol Rthchs Symbol VDS ID ±IG1/2SM ±V G1/G2S Ptot Tstg Tch Value 8 25 1 6 160 -55 ... 150 150 Unit V mA V mW °C Value ≤280 Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-27-2004 BG3140... Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = 0 , VG2S = 0 V(BR)DS Symbol min. 12 6 6 - Values typ. 15 0.7 0.6 max. 15 15 50 50 10 - Unit V Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = ...