BGA2001

DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGA2001 Silicon MMIC amplifier Product specification Supersedes data of 1999 Jul 23 1999 Aug 11 Philips Semiconductors Product specification Silicon MMIC amplifier FEATURES Low current, low voltage Very high power gain Low noise figure Integrated temperature compensated biasing Supply and RF output pin combined. APPLICATIONS RF front end Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors Low noise amplifiers Satellite television tuners (SATV) High frequency oscillators. DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL VS IS MSG NF PARAMETER DC supply voltage DC supply current maximum stable gain noise figure CONDITIONS RF input AC coupled VVS-OUT = 2.5 V; RF input AC coupled VVS-OUT = 2.5 V; f = 1.8 GHz; Tamb = 25 °C VVS-OUT = 2.5 V; f = 1.8 GHz; ΓS = Γopt − 4.5 19.5 1.3 TYP. − − − Marking code: A1. 2 Top view 1 MAM430 BGA2001 PINNING PIN 1 2 3 4 GND RF in GND VS + RFout DESCRIPTION handbook, halfpage VS+RFout 4 3 BIAS CIRCUIT RFin GND Fig.1 Simplified outline (SOT343R) and symbol. MAX. 4.5 V UNIT mA dB dB 1999 Aug 11 2 Philips Semiconductors Product specification Silicon MMIC amplifier LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134...