BGA2031

DISCRETE SEMICONDUCTORS DATA SHEET M3D452 BGA2031 MMIC variable gain amplifier Preliminary specification Supersedes data of 1999 Feb 26 1999 Jul 23 Philips Semiconductors Preliminary specification MMIC variable gain amplifier FEATURES High gain Excellent adjacent channel power rejection Small SMD package Low dissipation. APPLICATIONS General purpose variable gain amplifier for low voltage and medium power Driver for power amplifiers in systems that require good linearity, such as CDMA, both cellular band (850 MHz) and PCS (1.9 GHz). This is because of the high output power and good linearity. DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) 2 stage variable gain amplifier in double polysilicon technology in a 5-pin SOT551A plastic SMD package for low voltage medium power applications. PINNING PIN 1 2 3 4 5 RF in CTRL VS1 VS2 + RF out GND BGA2031 DESCRIPTION handbook, halfpage VS1 4 RFin VS2+RFout GND 5 1 Top view 2 3 CTRL BIAS CIRCUIT MAM429 Marking code: G1. Fig.1 Simplified outline (SOT551A) and symbol. QUICK REFERENCE DATA SYMBOL VS1, VS2 IS PARAMETER supply voltages supply current into pin 3 + pin 4 VCTRL = 0 VCTRL = 2.7 V; VS = 3.6 V VCTRL = 2.4 V; VS = 3 V PL ACPR Gp ∆G load power adjacent channel power rejection power gain gain control range at 1 dB gain compression point; f = 1.9 GHz f = 1.9 GHz; PL = 12 dBm f = 836 MHz; PL = 8 dBm f = 1.9 GHz; PL = 12 dBm f = 836 MHz; PL = 8 dBm f = 836 MHz; PL = 8 dBm CONDITIONS 0 51 30 1...