BGA310

BGA 310 Silicon Bipolar MMIC-Amplifier Preliminary data Cascadable 50 Ω-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P -1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz 1 RF OUT/Bias 3 4 2 1 VPS05178 RF IN 3 Circuit Diagram 2, 4 EHA07312 GND Type Marking Ordering Code Q62702-G0041 Pin Configuration Package BGA 310 BLs Maximum Ratings Parameter Device current 1 RFout/bias 2 GND 3 RF input 4 GND SOT-143 Symbol Value 60 250 10 150 -65 ...+150 -65 ...+150 Unit mA mW dBm °C ID Ptot PRFin Tj TA T stg 1) Total power dissipation, T S ≤ 99 °C RF input power Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS ≤ 205 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BGA 310 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (VD = 4.7 V, Zo = 50 Ω) Insertion power gain |S21| 2 ∆ |S 21|2 10 9 8 +-0.5 typ. max. Unit dB f = 0.1 GHz f = 1 GHz f = 1.8 GHz Insertion point gain flatness f = 0.1 GHz to 0.6 GHz Noise figure NF 6 6.5 7 9 20 15 dBm dB f = 0.1 GHz f = 1 GHz f = 2 GHz 1dB compression point P-1dB RL in RL out f = 1 GHz Return loss input f = 0.1 GHz to 2 GHz Return loss output f = 0.1 GHz to 3 GHz Typical biasing configuration min. VCC = 7 V R Bias ΙD RFC (optional) 4 3 2 EHA07313 Semiconductor Group Semiconductor Group...