BGA427

BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1) 4 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA)
Noise figure NF = 2.2 dB at 1.8 GHz
Typical device voltage VD = 2 V to 5 V
Reverse isolation  35 dB (Appl.2) 2 1 VPS05605 3 +V 4 OUT Circuit Diagram IN 1 2 GND EHA07378 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGA427 Maximum Ratings Parameter Device current Device voltage Marking BMs 1, IN Pin Configuration 2, GND 3, +V 4, Out Package SOT343 Symbol ID VD,+V Ptot PRFin Tj TA Tstg Value 25 6 150 -10 150 -65 ... 150 -65 ... 150 Unit mA V mW dBm °C Total power dissipation TS = 120 °C RF input power Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - soldering point1) RthJS
295 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-02-2001 BGA427 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteristics VD = 3 V, Zo = 50
, Testfixture Appl.1 Insertion power gain |S21|2 f = 0.1 GHz f = 1 GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz Intercept point at the output f = 1.8 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz S12 NF IP3out RLin RLout 1.9 2 2.2 +7 >12 >9 dBm dB ty...