BGA619

Application Note No. 081 Discrete Semiconductors The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications Features Easy-to-use LNA MMIC in 70 GHz ft SiGe technology Tiny „Green“ P-TSLP-7-1 package (no Lead or Halogen compounds) Low external component count Integrated output DC blocking capacitor, integrated RF choke on internal bias network Three gain steps Power off function High IP3 in all modes Applications Low Noise Amplifier for 1900 MHz PCS wireless frontends (CDMA 2000). Introduction The BGA619 is an easy-to-use, low-cost Low Noise Amplifier (LNA) MMIC designed for use in today’s PCS systems which require excellent linearity in each of several gain step modes. Based on Infineon’s cost-effective 70 GHz fT Silicon-Germanium (SiGe) B7HF bipolar process technology, the BGA619 offers a 1.5 dB noise figure and 14.9 dB of gain at 1.96 GHz with a current consumption of 6.5 mA in high gain mode. BGA619 offers impressive IIP3 performance of 7 dBm in High Gain mode, particularly for a threegain step, low-cost, integrated MMIC. The new LNA incorporates a 50 Ω pre-matched output with an integrated output DC blocking capacitor. The input is pre-matched, requiring an external DC blocking capacitor. An integrated, on-chip inductor eliminates the need for an external RF choke on the voltage supply pin. The operating mode of the device is determined by the voltage at the GS-pin. An integrated on/off feature provides for low power consumptio...