BGD104

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD104 CATV power doubler amplifier module Product specification Supersedes data of February 1995 1999 Mar 22 Philips Semiconductors Product specification CATV power doubler amplifier module FEATURES Excellent linearity High output level Silicon nitride passivation Rugged construction TiPtAu metallized crystals ensure optimal reliability. DESCRIPTION Power doubler amplifier module for CATV systems operating over a frequency range of 40 to 450 MHz at a voltage supply of 24 V (DC). QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 50 MHz f = 450 MHz VB = 24 V MIN. 19.5 20.5 − PINNING - SOT115J PIN 1 2 3 5 7 8 9 input common common +VB common common output Side view BGD104 DESCRIPTION fpage 1 2 3 8 5 7 9 MSA319 Fig.1 Simplified outline. MAX. 20.5 22.5 435 UNIT dB dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vi Tstg Tmb RF input voltage storage temperature operating mounting base temperature PARAMETER − −40 −20 MIN. MAX. 65 +100 +100 UNIT dBmV °C °C 1999 Mar 22 2 Philips Semiconductors Product specification CATV power doubler amplifier module CHARACTERISTICS Bandwidth 40 to 450 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω SYMBOL Gp SL FL S11 power gain slope cable equivalent flatness of frequency response input return losses PARAMETER CONDITIONS f = 50 MHz f = 450 MHz f = 40 to 450 MHz f = 40 to 450...