CATV power doubler amplifier modules
DISCRETE SEMICONDUCTORS
DATA SHEET
BGD502; BGD504 CATV power doubler amplifier modules
Product specification Supersedes...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
BGD502; BGD504 CATV power doubler amplifier modules
Product specification Supersedes data of February 1994 File under Discrete Semiconductors, SC16 1995 Oct 25
Philips Semiconductors
Product specification
CATV power doubler amplifier modules
FEATURES Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction TiPtAu metallized crystals ensure optimal reliability. DESCRIPTION Hybrid amplifier modules for CATV systems operating over a frequency range of 40 to 550 MHz at a voltage supply of 24 V (DC). QUICK REFERENCE DATA SYMBOL Gp power gain BGD502 BGD504 power gain BGD502 BGD504 Itot total current consumption (DC) VB = 24 V f = 550 MHz PARAMETER CONDITIONS f = 50 MHz PINNING - SOT115C PIN 1 2 3 5 7 8 9 input common common +VB common common output DESCRIPTION
fpage
BGD502; BGD504
1 2 3
5
7 8 9
MSB004 - 2
Side view
Fig.1 Simplified outline.
MIN. 18 19.5 18.8 20.2 −
MAX. 19 20.5 20.8 22.2 435
UNIT dB dB dB dB mA
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vi Tstg Tmb RF input voltage storage temperature operating mounting base temperature PARAMETER − −40 −20 MIN. MAX. 60 +100 +100 UNIT dBmV °C °C
1995 Oct 25
2
Philips Semiconductors
Product specification
CATV power doubler amplifier modules
CHARACTERISTICS Bandwidth 40 to 550 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. SYMBOL Gp PARAMETER power gain BGD502 BGD504 power gain BGD502 BGD504 SL FL S11 s...
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