BGD506

DISCRETE SEMICONDUCTORS DATA SHEET BGD506 CATV amplifier module Product specification Supersedes data of February 1995 File under Discrete Semiconductors, SC16 1997 Apr 10 Philips Semiconductors Product specification CATV amplifier module FEATURES Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction TiPtAu metallized crystals ensure optimal reliability. DESCRIPTION Hybrid amplifier module for CATV systems operating over a frequency range of 40 to 550 MHz at a voltage supply of +24 V (DC). QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER power gain total current consumption (DC) CONDITIONS f = 50 MHz f = 550 MHz VB = +24V MIN. 21.5 22.1 − − 435 PINNING - SOT115J PIN 1 2 3 5 7 8 9 DESCRIPTION input common common +VB common common output 1 2 3 5 fpage BGD506 PIN CONFIGURATION 7 8 9 MSA319 - 1 Side view Fig.1 Simplified outline. MAX. 22.5 UNIT dB dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vi Tstg Tmb VB RF input voltage storage temperature mounting base operating temperature DC supply voltage PARAMETER − −40 −20 − MIN. MAX. 65 +100 +100 +28 UNIT dBmV °C °C V 1997 Apr 10 2 Philips Semiconductors Product specification CATV amplifier module CHARACTERISTICS Table 1 Bandwidth 40 to 550 MHz; Tcase = 35 °C; ZS = ZL = 75 Ω PARAMETER power gain slope cable equivalent flatness of frequency response input return losses CONDITIONS f = 50 MHz f = 550 MHz SL FL S11 f = 40 to 550 MHz f = 40 t...