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BGD702MI Dataheets PDF



Part Number BGD702MI
Manufacturers NXP
Logo NXP
Description CATV amplifier module
Datasheet BGD702MI DatasheetBGD702MI Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD702MI CATV amplifier module Product specification Supersedes data of 1997 Mar 25 File under Discrete Semiconductors, SC16 1998 Mar 13 Philips Semiconductors Product specification CATV amplifier module FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability • Mirrored image pinning of the BGD702. APPLICATIONS • CATV systems operating in.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD702MI CATV amplifier module Product specification Supersedes data of 1997 Mar 25 File under Discrete Semiconductors, SC16 1998 Mar 13 Philips Semiconductors Product specification CATV amplifier module FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability • Mirrored image pinning of the BGD702. APPLICATIONS • CATV systems operating in the 40 to 750 MHz frequency range. handbook, halfpage BGD702MI PINNING - SOT115J PIN 1 2 3 5 7 8 9 output common common +VB common common input DESCRIPTION DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC). 1 2 3 8 5 7 9 Side view MSA319 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 50 MHz f = 750 MHz VB = 24 V 18 18.5 − MIN. 19 − 435 MAX. UNIT dB dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vi Tstg Tmb RF input voltage storage temperature operating mounting base temperature PARAMETER − −40 −20 MIN. 65 +100 +100 MAX. °C °C UNIT dBmV 1998 Mar 13 2 Philips Semiconductors Product specification CATV amplifier module CHARACTERISTICS Table 1 Bandwidth 40 to 750 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω PARAMETER power gain slope cable equivalent flatness of frequency response input return losses CONDITIONS f = 50 MHz f = 750 MHz SL FL S11 f = 40 to 750 MHz f = 40 to 750 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 750 MHz S22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 640 MHz f = 640 to 750 MHz S21 CTB Xmod CSO d2 Vo F phase response composite triple beat cross modulation composite second order distortion second order distortion output voltage noise figure f = 50 MHz 110 channels flat; Vo = 44 dBmV; measured at 745.25 MHz 110 channels flat; Vo = 44 dBmV; measured at 55.25 MHz 110 channels flat; Vo = 44 dBmV; measured at 746.5 MHz note 1 dim = −60 dB; note 2 f = 50 MHz f = 450 MHz f = 550 MHz f = 600 MHz f = 750 MHz Itot Notes 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz. 2. Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo −6 dB; fr = 749.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 738.25 MHz. total current consumption (DC) note 3 MIN. 18 18.5 0.2 − 20 19 18 17 16 20 19 18 17 16 −45 − − − − 61 − − − − − − − 2 BGD702MI SYMBOL Gp MAX. 19 UNIT dB dB dB dB dB dB dB dB dB dB dB dB dB dB deg dB dB dB dB dBmV dB dB dB dB dB mA ±0.5 − − − − − − − − − − +45 −58 −62 −58 −68 − 5.5 6.5 6.5 7 8.5 435 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 1998 Mar 13 3 Philips Semiconductors Product specification CATV amplifier module Table 2 Bandwidth 40 to 600 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω PARAMETER power gain slope cable equivalent flatness of frequency response input return losses CONDITIONS f = 50 MHz f = 600 MHz SL FL S11 f = 40 to 600 MHz f = 40 to 600 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 600 MHz S22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 600 MHz S21 CTB phase response composite triple beat f = 50 MHz 85 channels flat; Vo = 44 dBmV; measured at 595.25 MHz 85 channels flat; Vo = 44 dBmV; measured at 55.25 MHz 85 channels flat; Vo = 44 dBmV; measured at 596.5 MHz note 1 dim = −60 dB; note 2 see Table 1 note 3 MIN. 18 18.5 0.2 − 20 19 18 17 20 19 18 17 −45 − − 2 BGD702MI SYMBOL Gp MAX. 19 UNIT dB dB dB dB dB dB dB dB dB dB dB dB deg dB ±0.3 − − − − − − − − +45 −65 Xmod cross modulation − −65 dB CSO composite second order distortion − −60 dB d2 Vo F Itot Notes second order distortion output voltage noise figure total current consumption (DC) − 64 − − −70 − − 435 dB dBmV dB mA 1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 541.25 MHz; Vq = 44 dBmV; measured at fp + fq = 596.5 MHz. 2. Measured according to DIN45004B: fp = 590.25 MHz; Vp = Vo; fq = 597.25 MHz; Vq = Vo −6 dB; fr = 599.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 588.25 MHz. 3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V. 1998 Mar 13 4 Philips Semiconductors Product specification CATV amplifier module Table 3 Bandwidth 40 to 550 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω PARAMETER power gain slope cable equivalent flatness of frequency response input return losses CONDITIONS f = 50 MHz f = 550 MHz SL FL S11 f = 40 to 550 MHz f = 40 to 550 MHz f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz S22 output return losses f = 40 to 80 MHz f = 80 to 160 MHz f = 160 to 320 MHz f = 320 to 550 MHz S21 CTB phase response composite triple beat f = 50 MHz 77 channels flat; Vo = 44 dBmV; .


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