BGD816L

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD816L CATV amplifier module Objective specification 2000 Apr 12 Philips Semiconductors Objective specification CATV amplifier module FEATURES Excellent linearity Extremely low noise Excellent return loss properties Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability. APPLICATIONS CATV systems operating in the 40 to 870 MHz frequency range. DESCRIPTION Side view handbook, halfpage BGD816L PINNING - SOT115J PIN 1 2 and 3 5 7 and 8 9 input common +VB common output DESCRIPTION 1 2 3 5 7 8 9 MSA319 Hybrid amplifier module in a SOT115J package operating with a voltage supply of 24 V (DC). Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 45 MHz f = 870 MHz VB = 24 V MIN. 21.2 22 345 MAX. 21.8 23 375 UNIT dB dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VB Vi Tstg Tmb supply voltage RF input voltage storage temperature operating mounting base temperature PARAMETER − − −40 −20 MIN. MAX. 30 70 +100 +100 V dBmV °C °C UNIT 2000 Apr 12 2 Philips Semiconductors Objective specification CATV amplifier module CHARACTERISTICS Bandwidth 40 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω SYMBOL Gp SL FL PARAMETER power gain slope straight line flatness straight line f = 45 MHz f = 870 MHz f = 45 to 870 MHz; note 1 f = 45 to 100 MHz...