BGE884

DISCRETE SEMICONDUCTORS DATA SHEET BGE884 CATV amplifier module Product specification Supersedes data of 1995 Sep 14 File under Discrete Semiconductors, SC16 1997 Apr 14 Philips Semiconductors Product specification CATV amplifier module FEATURES Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability. DESCRIPTION Hybrid amplifier module for CATV/MATV systems operating over a frequency range of 40 to 860 MHz at a voltage supply of 24 V (DC). QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER power gain CONDITIONS f = 50 MHz − MIN. 16.5 MAX. 17.5 150 PINNING - SOT115G PIN 1 2 3 5 6 7 8 9 Note 1. Pins 1 and 9 carry DC voltages. DESCRIPTION input (note 1) common common common common common +VB output (note 1) 1 2 3 fpage BGE884 56 7 8 9 MSB049 - 2 Side view Fig.1 Simplified outline. UNIT dB mA total current consumption (DC) VB = 24 V LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VB Vi Tstg Tmb DC supply voltage RF input voltage storage temperature operating mounting base temperature PARAMETER − − −40 −20 MIN. 26 65 +100 +100 MAX. V dBmV °C °C UNIT 1997 Apr 14 2 Philips Semiconductors Product specification CATV amplifier module CHARACTERISTICS Table 1 Bandwidth 40 to 860 MHz; VB = 24 V; Tmb = 30 °C; ZS = ZL = 75 Ω PARAMETER power gain slope cable equivalent flatness of frequency response input return losses output return losses second order dis...