BGF844

DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM800 EDGE power module FEATURES Typical GSM EDGE performance at a supply voltage of 26 V: – Output power = 2.5 W – Gain = 30 dB – Efficiency = 16% – ACPR < −65 dBc at 400 kHz – rms EVM < 0.4% – peak EVM < 1.2% Low distortion to a GSM EDGE signal Excellent 2-tone performance Low die temperature due to copper flange Integrated temperature compensated bias 50 Ω input/output impedance Flat gain over frequency band. APPLICATIONS Base station RF power amplifiers in the 869 to 894 MHz frequency range GSM, GSM EDGE, multi carrier applications Macrocell (driver stage) and Microcell (final stage). DESCRIPTION 23 W LDMOS power amplifier module for base station amplifier applications in the 869 to 894 MHz band. QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C. MODE OF OPERATION CW GSM EDGE Note 1. ACPR 400 kHz at 30 kHz resolution bandwidth. f (MHz) 869 to 894 869 to 894 VS (V) 26 26 PL (W) 23 2.5 Gp (dB) 29 30 η (%) 50 16 ACPR (dBc) − −65(1) Fig.1 Simplified outline. Top view 1 23 BGF844 PINNING - SOT365C PIN 1 2 3 Flange RF input VS RF output ground DESCRIPTION MBL257 rms EVM (%) − 0.4 2003 Jun 06 2 Philips Semiconductors Product specification GSM800 EDGE power module LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VS PD ...