BGF944

DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM900 EDGE power module FEATURES Typical GSM EDGE performance at a supply voltage of 26 V: – Output power = 2.5 W – Gain = 29 dB – Efficiency = 15% – ACPR < −65 dBc at 400 kHz – rms EVM < 0.4% – peak EVM < 1.2% Low distortion to a GSM EDGE signal Excellent 2-tone performance Low die temperature due to copper flange Integrated temperature compensated bias 50 Ω input/output impedance Flat gain over frequency band. APPLICATIONS Base station RF power amplifiers in the 920 to 960 MHz frequency band GSM, GSM EDGE, multi carrier applications Macrocell (driver stage) and Microcell (final stage). DESCRIPTION 17 W LDMOS power amplifier module for base station amplifier applications in the 920 to 960 MHz band. QUICK REFERENCE DATA Typical RF performance at Tmb = 25 °C. MODE OF OPERATION CW GSM EDGE Note 1. ACPR 400 kHz at 30 kHz resolution bandwidth. f (MHz) 920 to 960 920 to 960 VS (V) 26 26 PL (W) 17 2.5 Gp (dB) 28 29 η (%) 47 15 ACPR (dBc) − −65(1) Fig.1 Simplified outline. Top view 1 23 BGF944 PINNING - SOT365C PIN 1 2 3 Flange RF input VS RF output ground DESCRIPTION MBL257 rms EVM (%) − 0.4 MODE OF OPERATION 2-tone f (MHz) 920 to 960 VS (V) 26 PL (W) 2.5 Gp (dB) 29 d3 (dB) −44 d5 (dB) −52 d7 (dB) −60 2003 Jun 06 2 Philips Semiconductors Product specification GS...