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BGR269 Dataheets PDF



Part Number BGR269
Manufacturers NXP
Logo NXP
Description Reverse Amplifier
Datasheet BGR269 DatasheetBGR269 Datasheet (PDF)

BGR269 200 MHz, 35 dB gain reverse amplifier Rev. 6 — 5 August 2010 Product data sheet 1. Product profile CAUTION 1.1 General description High performance amplifier in a SOT115J package, operating at a voltage supply of 24 V (DC). This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits „ Excellent linearity „ Silicon nitride passivation „ Rugged construction „ Gold metallization ensures excellent reli.

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BGR269 200 MHz, 35 dB gain reverse amplifier Rev. 6 — 5 August 2010 Product data sheet 1. Product profile CAUTION 1.1 General description High performance amplifier in a SOT115J package, operating at a voltage supply of 24 V (DC). This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits „ Excellent linearity „ Silicon nitride passivation „ Rugged construction „ Gold metallization ensures excellent reliability „ 35 dB amplification up to 200 MHz 1.3 Applications „ Reverse amplifier in two-way CATV systems operating in the 5 MHz to 200 MHz frequency range 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Gp power gain Itot total current Conditions f = 5 MHz f = 200 MHz VB = 24 V Min Typ 34.5 35 35 - [1] 145 160 Max Unit 35.5 dB 36 dB 175 mA [1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to VB = 35 V. NXP Semiconductors BGR269 200 MHz, 35 dB gain reverse amplifier 2. Pinning information Table 2. Pin 1 2 3 5 7 8 9 Pinning Description input common common +VB common common output Simplified outline 13579 Symbol 5 1 9 23 78 sym095 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BGR269 - rectangular single-ended package; aluminium flange; SOT115J 2 vertical mounting holes; 2 × 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Vi RF input voltage - Tmb mounting base temperature −20 Tstg storage temperature range −40 Max 50 +100 +100 Unit dBmV °C °C BGR269 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 5 August 2010 © NXP B.V. 2010. All rights reserved. 2 of 8 NXP Semiconductors BGR269 200 MHz, 35 dB gain reverse amplifier 5. Characteristics Table 5. Characteristics Bandwidth 5 MHz to 200 MHz; VB = 24 V; Tmb = 30 °C; ZS = ZL = 75 Ω; unless otherwise specified. Symbol Parameter Conditions Min Typ Gp power gain f = 5 MHz f = 200 MHz 34.5 35 35 - SL slope straight line f = 5 MHz to 200 MHz −0.2 - FL flatness of frequency response f = 5 MHz to 10 MHz −0.1 - f = 10 MHz to 190 MHz −0.1 - f = 190 MHz to 200 MHz −0.1 - s11 s22 ϕs21 s12 CTB input return losses output return losses phase response reverse isolation composite triple beat f = 5 MHz to 200 MHz f = 5 MHz to 200 MHz f = 5 MHz f = 5 MHz to 200 MHz Vo = 50 dBmV 6 channels flat; measured at 37 MHz 20 - 20 - −45 - - - [1] - - 10 channels flat; measured at 67.25 MHz [2] - - 28 channels flat; measured at 199.25 MHz [3] - - Xmod cross modulation Vo = 50 dBmV 6 channels flat; measured at 37 MHz [1] - - 10 channels flat; measured at 25 MHz [2] - - 28 channels flat; measured at 25 MHz [3] - - CSO composite second order distortion Vo = 50 dBmV 6 channels flat; measured at 38 MHz [1] - - 10 channels flat; measured at 68.5 MHz [2] - - 28 channels flat; measured at 200.5 MHz [3] - - Vo output voltage d2 second-order distortion NF noise figure dim = −60 dB f = 70 MHz [4] 62 - [5] - - - - f = 200 MHz - - Itot total current [6] 145 160 Max Unit 35.5 dB 36 dB 0.6 dB +0.4 dB +0.5 dB +0.4 dB - dB - dB +45 deg −42 dB −74 dB −68 dB −57 dB −66 dB −57 dB −50 dB −74 dB −74 dB −66 dB - dBmV −70 dB 5.3 dB 5.5 dB 175 mA [1] From the following frequencies: 7.00 MHz, 13.00 MHz, 19.00 MHz, 25.00 MHz, 31.00 MHz and 37.00 MHz. [2] From the following frequencies: 7.00 MHz, 13.00 MHz, 19.00 MHz, 25.00 MHz, 31.00 MHz, 37.00 MHz, 43.00 MHz, 55.25 MHz, 61.25 MHz and 67.25 MHz. [3] From the following frequencies: 7.00 MHz, 13.00 MHz, 19.00 MHz, 25.00 MHz, 31.00 MHz, 37.00 MHz, 43.00 MHz, 55.25 MHz, 61.25 MHz, 67.25 MHz, 77.25 MHz, 83.25 MHz, 109.25 MHz, 115.25 MHz, 121.25 MHz, 127.25 MHz, 133.25 MHz, 139.25 MHz, 145.25 MHz, 151.25 MHz, 157.25 MHz, 163.25 MHz, 169.25 MHz, 175.25 MHz, 181.25 MHz, 187.25 MHz, 193.25 MHz and 199.25 MHz. [4] Measured according to DIN45004B; fp = 197.25 MHz; Vp = Vo; fq = 204.25 MHz; Vq = Vo − 6 dB; fr = 206.25 MHz; Vr = Vo − 6 dB; measured at fp + fq − fr = 195.25 MHz. [5] fp = 83.25 MHz; Vp = 50 dBmV; fq = 115.25 MHz; Vq = 50 dBmV; measured at fp + fq = 198.5 MHz. [6] The module normally operates at VB = 24 V, but is able to withstand supply transients up to VB = 35 V. BGR269 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 6 — 5 August 2010 © NXP B.V. 2010. All rights reserved. 3 of 8 NXP Semiconductors 6. Package outline BGR269 200 MHz, 35 dB gain reverse amplifier Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra h.


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