Document
BGR269
200 MHz, 35 dB gain reverse amplifier
Rev. 6 — 5 August 2010
Product data sheet
1. Product profile
CAUTION
1.1 General description
High performance amplifier in a SOT115J package, operating at a voltage supply of 24 V (DC).
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
Excellent linearity Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability 35 dB amplification up to 200 MHz
1.3 Applications
Reverse amplifier in two-way CATV systems operating in the 5 MHz to 200 MHz frequency range
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Gp
power gain
Itot
total current
Conditions f = 5 MHz f = 200 MHz VB = 24 V
Min Typ
34.5 35
35
-
[1] 145 160
Max Unit
35.5 dB
36
dB
175 mA
[1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to VB = 35 V.
NXP Semiconductors
BGR269
200 MHz, 35 dB gain reverse amplifier
2. Pinning information
Table 2. Pin 1 2 3 5 7 8 9
Pinning Description input common common +VB common common output
Simplified outline
13579
Symbol
5
1
9
23 78
sym095
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
Version
BGR269
-
rectangular single-ended package; aluminium flange; SOT115J 2 vertical mounting holes; 2 × 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Vi
RF input voltage
-
Tmb
mounting base temperature
−20
Tstg
storage temperature
range
−40
Max 50 +100 +100
Unit dBmV °C °C
BGR269
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 5 August 2010
© NXP B.V. 2010. All rights reserved.
2 of 8
NXP Semiconductors
BGR269
200 MHz, 35 dB gain reverse amplifier
5. Characteristics
Table 5. Characteristics Bandwidth 5 MHz to 200 MHz; VB = 24 V; Tmb = 30 °C; ZS = ZL = 75 Ω; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Gp
power gain
f = 5 MHz f = 200 MHz
34.5 35 35 -
SL
slope straight line
f = 5 MHz to 200 MHz
−0.2 -
FL
flatness of frequency response f = 5 MHz to 10 MHz
−0.1 -
f = 10 MHz to 190 MHz
−0.1 -
f = 190 MHz to 200 MHz
−0.1 -
s11 s22 ϕs21 s12 CTB
input return losses output return losses phase response reverse isolation composite triple beat
f = 5 MHz to 200 MHz f = 5 MHz to 200 MHz f = 5 MHz f = 5 MHz to 200 MHz Vo = 50 dBmV
6 channels flat; measured at 37 MHz
20 -
20 -
−45 -
-
-
[1] -
-
10 channels flat; measured at 67.25 MHz [2] -
-
28 channels flat; measured at 199.25 MHz [3] -
-
Xmod cross modulation
Vo = 50 dBmV 6 channels flat; measured at 37 MHz
[1] -
-
10 channels flat; measured at 25 MHz
[2] -
-
28 channels flat; measured at 25 MHz
[3] -
-
CSO
composite second order distortion
Vo = 50 dBmV 6 channels flat; measured at 38 MHz
[1] -
-
10 channels flat; measured at 68.5 MHz [2] -
-
28 channels flat; measured at 200.5 MHz [3] -
-
Vo
output voltage
d2
second-order distortion
NF
noise figure
dim = −60 dB f = 70 MHz
[4] 62
-
[5] -
-
-
-
f = 200 MHz
-
-
Itot
total current
[6] 145 160
Max Unit
35.5 dB
36 dB
0.6 dB
+0.4 dB
+0.5 dB
+0.4 dB
-
dB
-
dB
+45 deg
−42 dB
−74 dB −68 dB −57 dB
−66 dB −57 dB −50 dB
−74 dB
−74 dB
−66 dB
-
dBmV
−70 dB
5.3 dB
5.5 dB
175 mA
[1] From the following frequencies: 7.00 MHz, 13.00 MHz, 19.00 MHz, 25.00 MHz, 31.00 MHz and 37.00 MHz.
[2] From the following frequencies: 7.00 MHz, 13.00 MHz, 19.00 MHz, 25.00 MHz, 31.00 MHz, 37.00 MHz, 43.00 MHz, 55.25 MHz, 61.25 MHz and 67.25 MHz.
[3] From the following frequencies: 7.00 MHz, 13.00 MHz, 19.00 MHz, 25.00 MHz, 31.00 MHz, 37.00 MHz, 43.00 MHz, 55.25 MHz, 61.25 MHz, 67.25 MHz, 77.25 MHz, 83.25 MHz, 109.25 MHz, 115.25 MHz, 121.25 MHz, 127.25 MHz, 133.25 MHz, 139.25 MHz, 145.25 MHz, 151.25 MHz, 157.25 MHz, 163.25 MHz, 169.25 MHz, 175.25 MHz, 181.25 MHz, 187.25 MHz, 193.25 MHz and 199.25 MHz.
[4] Measured according to DIN45004B; fp = 197.25 MHz; Vp = Vo; fq = 204.25 MHz; Vq = Vo − 6 dB; fr = 206.25 MHz; Vr = Vo − 6 dB; measured at fp + fq − fr = 195.25 MHz.
[5] fp = 83.25 MHz; Vp = 50 dBmV; fq = 115.25 MHz; Vq = 50 dBmV; measured at fp + fq = 198.5 MHz. [6] The module normally operates at VB = 24 V, but is able to withstand supply transients up to VB = 35 V.
BGR269
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 5 August 2010
© NXP B.V. 2010. All rights reserved.
3 of 8
NXP Semiconductors
6. Package outline
BGR269
200 MHz, 35 dB gain reverse amplifier
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra h.