BGS67A

DISCRETE SEMICONDUCTORS DATA SHEET M3D818 BGS67A 65 MHz, 25.5 dB gain reverse amplifier Product specification Supersedes data of 2002 Jun 06 2002 Sep 06 Philips Semiconductors Product specification 65 MHz, 25.5 dB gain reverse amplifier FEATURES Extremely low noise Excellent linearity Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability. APPLICATIONS Reverse amplifier in two-way CATV systems in the 5 to 65 MHz frequency range. DESCRIPTION The BGS67A is a hybrid high dynamic range amplifier module in a leadless SOT567A package, operating at a supply voltage of 12 V. 1 2 3 4 BGS67A PINNING - SOT567A PIN 1 2 3 4 5 6 7 8 input common provision +VB output provision common +VB DESCRIPTION 8 Bottom view 7 6 5 MBL432 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL Gp Itot power gain total current consumption (DC) PARAMETER CONDITIONS f = 10 MHz VB = 12 V MIN. 25 75 MAX. 26 95 UNIT dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Vi Tstg Tmb RF input voltage storage temperature operating mounting base temperature PARAMETER − −40 −20 MIN. MAX. 55 +100 +100 UNIT dBmV °C °C 2002 Sep 06 2 Philips Semiconductors Product specification 65 MHz, 25.5 dB gain reverse amplifier CHARACTERISTICS Bandwidth 5 to 65 MHz; VB = 12 V; Tmb = 30 °C; ZS = ZL = 75 Ω. SYMBOL Gp SL FL s11 s22 CTB Xmod d2 NF Itot Notes 1. fp = 19 MHz; Vp = 50 dBmV; fq = 31 MHz; Vq = 50 dBmV; measured at f...