BGY122B

DISCRETE SEMICONDUCTORS DATA SHEET M3D369 BGY122A; BGY122B UHF amplifier modules Product specification Supersedes data of 1997 Dec 01 1998 May 11 Philips Semiconductors Product specification UHF amplifier modules FEATURES Single 4.8 V nominal supply voltage 1.2 W output power Easy control of output power by DC voltage Very high efficiency (typ. 55%) Silicon bipolar technology Standby current less than 100 µA. APPLICATIONS Hand-held transmitting equipment operating in the 824 to 849 MHz and 872 to 905 MHz frequency ranges. DESCRIPTION The BGY122A and BGY122B are three-stage UHF amplifier modules in a SOT388B package. Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate. The modules produce an output power of 1.2 W into a load of 50 Ω with an RF drive power of 2 mW. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. TYPE BGY122A BGY122B MODE OF OPERATION CW CW f (MHz) 824 to 849 872 to 905 VS (V) 4.8 4.8 PL (W) 1.2 1.2 handbook, halfpage BGY122A; BGY122B PINNING - SOT388B PIN 1 2 3 4 Flange RF input VC VS RF output ground DESCRIPTION 1 Top view 2 3 4 MBK197 Fig.1 Simplified outline. Gp (dB) ≥27.8 ≥27.8 η (%) typ. 55 typ. 55 ZS; ZL (Ω) 50 50 1998 May 11 2 Philips Semiconductors Product specification UHF amplifier modules LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS VC PD PL Tstg Tmb PARAMETER DC suppl...