BGY1816S

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D388 BGY1816S UHF amplifier module Product specification Supersedes data of 1999 Jan 07 1999 Apr 13 Philips Semiconductors Product specification UHF amplifier module FEATURES 26 V nominal supply voltage 16 W output power into a load of 50 Ω with an RF drive power of ≤20 mW. APPLICATIONS Base station transmitting equipment operating in the 1805 to 1880 MHz frequency band. DESCRIPTION The BGY1816S is a three-stage UHF amplifier module in a SOT501A package with a plastic cap. It consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic AlN substrate. PINNING - SOT501A PIN 1 2 3 4 Flange RF input VS1 VS2 RF output ground BGY1816S DESCRIPTION 1 Front view 2 3 4 MBK760 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION CW f (MHz) 1805 to 1880 VS1 (V) 5 VS2 (V) 26 PL (W) ≥16 Gp (dB) ≥29 η (%) ≥30 ZS; ZL (Ω) 50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS1 VS2 PD PL Tstg Tmb PARAMETER DC supply voltage DC supply voltage input drive power load power storage temperature operating mounting base temperature Tmb = 25 °C CONDITIONS − − − −30 −10 MIN. 4.5 MAX. 5.5 28 120 20 +100 +90 V V mW W °C °C UNIT 1999 Apr 13 2 Philips Semiconductors Product specification UHF amplifier module CHARACTERISTICS Tmb = 25 °C; VS1 = 5 V; VS2 = 26 V; PL = 16 W; ZS = Z...