BGY212

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D373 BGY212A UHF amplifier module Preliminary specification 1999 Aug 23 Philips Semiconductors Preliminary specification UHF amplifier module FEATURES 3.5 V nominal supply voltage 2 W output power Easy output power control by DC voltage. APPLICATIONS Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in the 1710 to 1785 MHz frequency range. DESCRIPTION book, halfpage BGY212A PINNING - SOT482C PIN 1 2 3 4 5 VC VS RF output ground DESCRIPTION RF input The BGY212A is a three-stage UHF amplifier module in a SOT482C leadless package with a plastic cover. The module consists of one NPN silicon planar transistor die and one bipolar monolithic integrated circuit mounted together with matching and bias circuit components on a metallized ceramic substrate. 5 4 3 2 1 MBK201 Bottom view Fig.1 Simplified outline QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION Pulsed; δ = 1 : 8 f (MHz) 1710 to 1785 VS (V) 3.5 VC (V) ≤2.2 PL (dBm) typ. 33 Gp (dB) typ. 33 η (%) typ. 40 ZS , ZL (Ω ) 50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS VC PD PL Tstg Tmb PARAMETER DC supply voltage DC control voltage input drive power load power storage temperature operating mounting base temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and h...