Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D373
BGY212A UHF amplifier module
Preliminary specification 1999 Aug 23
Philips Semiconductors
Preliminary specification
UHF amplifier module
FEATURES • 3.5 V nominal supply voltage • 2 W output power • Easy output power control by DC voltage. APPLICATIONS • Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in the 1710 to 1785 MHz frequency range. DESCRIPTION
book, halfpage
BGY212A
PINNING - SOT482C PIN 1 2 3 4 5 VC VS RF output ground DESCRIPTION RF input
The BGY212A is a three-stage UHF amplifier module in a SOT482C leadless package with a plastic cover. The module consists of one NPN silicon planar transistor die and one bipolar monolithic integrated circuit mounted together with matching and bias circuit components on a metallized ceramic substrate.
5
4
3
2
1
MBK201
Bottom view
Fig.1 Simplified outline
QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION Pulsed; δ = 1 : 8 f (MHz) 1710 to 1785 VS (V) 3.5 VC (V) ≤2.2 PL (dBm) typ. 33 Gp (dB) typ. 33 η (%) typ. 40 ZS , ZL (Ω ) 50
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS VC PD PL Tstg Tmb PARAMETER DC supply voltage DC control voltage input drive power load power storage temperature operating mounting base temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. CONDITIONS VC < 0.2 V; PD = 0 mW VC ≥ 0.2 V − − − − − −40 −30 MIN. 7 4.1 2.7 10 34.1 +100 +100 MAX. V V V dBm dBm °C °C UNIT
1999 Aug 23
2
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
CHARACTERISTICS ZS = ZL = 50 Ω; PD = 0 dBm; VS = 3.5 V; VC ≤ 2.2 V; f = 1710 to 1785 MHz; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs unles otherwise specified. SYMBOL IQ ICM PL PARAMETER leakage current peak control current load power VC = 0.2 V VC = 0.2 V; VS = 7 V adjust V C for PL = 32 dBm VC = 2.2 V; VS = 3.5 V VC = 2.2 V; VS = 3.2 V VC = 2.2 V; VS = 3.2 V; Tmb = 85 °C Gp η H2 H3 VSWRin power gain efficiency second harmonic third harmonic input VSWR stability PL = 32 dBm PL = 32 dBm PL = 32 dBm PL = 32 dBm PL = 2 to 32 dBm VS = 3.2 to 4.1 V; PD = −3 to 3 dBm; VC = 0 to 2.2 V; PL ≤ 33 dBm; VSWR ≤ 8 : 1 through all phases VC = 0.2 V; PD = 3 dBm PL = 2 to 32 dBm; bandwidth = 100 kHz; 20 MHz above transmission band PD with 3% AM; f = 100 kHz; PL = 2 to 32 dBm PD = −0.5 to 0.5 dBm; PL = 2 to 32 dBm PL = −8 to +2 dBm PL = 2 to 32 dBm TX / RX conversion tr tf carrier rise time carrier fall time ruggedness PL = 32 dBm; f = 1785 MHz PL (1805 MHz) / PD (1765 MHz) PL = 2 to 32 dBm; time to settle within −0.5 dB of final PL PL = 2 to 32 dBm; time to fall below − 33 dBm VS = 4.1 V; adjust VC for PL = 33 dBm; VSWR ≤ 8 : 1 through all phases CONDITIONS − − − − 32 31 − − − − − − − MIN. − 5 − 33.2 32.3 31.8 32 40 − − TYP. MAX. 10 20 3 − − − − − −35 −40 3:1 −60 dBc UNIT µA mA mA dBm dBm dBm dB % dBc dBc
isolation control bandwidth Pn noise power
− tbd −
−36 − −73
−33 − −71
dBm MHz dBm
AM/AM conversion AM/PM conversion control slope
− − − − − − −
5 − tbd tbd 28 1.5 1.5
8 tbd − − 30 2 2
% deg/dB dB / V dB / V dB µs µs
no degradation
1999 Aug 23
3
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
3 PL (W)
1710MHz
4 PL (W)
1710MHz 1785MHz
3 2
1785MHz
2
1 1
0 1 1.5 2 VC (V)
ZS = ZL = 50 Ω; V S = 3.5 V; P D = 0 dBm; Tmb = 25 °C; δ = 1 : 8; t p = 575 µs.
0 2.5 2 3 4 VS (V)
ZS = ZL = 50 Ω; VC = 2.2 V; PD = 0 dBm; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
5
Fig.2
Load power as a function of control voltage; typical values.
Fig.3
Load power as a function of supply voltage; typical values.
50
η
(%) 40
1710MHz 1785MHz
3 PL (W)
2 30
20 1 10
0 0 0.5 1 1.5 2 PL (W)
ZS = ZL = 50 Ω; V S = 3.5 V; P D = 0 dBm; Tmb = 25 °C; δ = 1 : 8; t p = 575 µs.
2.5
0 1700
1750
1800 f (MHz)
ZS = ZL = 50 Ω; VS = 3.5 V; P D = 0 dBm; VC = 2.2 V; Tmb = 25 °C; δ = 1 : 8; t p = 575 µs.
Fig.4
Efficiency as a function of load power; typical values.
Fig.5
Load power as a function of frequency; typical values.
1999 Aug 23
4
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY212A
4 VSWRIN
0 H2, H3 (dBc) -20
3
H2
-40
1710MHz H3
2
1785MHz
-60
1 0 1 2 PL (W)
ZS = ZL = 50 Ω; V S = 3.5 V; P D = 0 dBm; Tmb = 25 °C; δ = 1 : 8; t p = 575 µs
3
-80 1700
1750
1800 f (MHz)
ZS = ZL = 50 Ω; VS = 3.5 V; P D = 0 dBm; PL = 1.6 W; Tmb = 25 °C; δ = 1 : 8; t p = 575 µs.
Fig.6
Input VSWR as a function of load power; typical values.
Fig.7
Harmonics as a function of frequency; typical values.
3 PL (W)
(1)
16 output AM (%) 12
1710MHz
2
(2) (3) (4)
8
1785MHz
1 4
0 0 20 40 60 80 100 Tmb (°C)
0 -20 0 20 40 PL (dBm)
ZS = Z L = 50 Ω; PD = 0 dBm; VC = 2.2 V; δ = 1 : 8; tp = 575 µs. (1) VS = 3.