CATV Amplifier
DISCRETE SEMICONDUCTORS
DATA SHEET
BGY80; BGY81 CATV amplifier modules
Product specification File under Discrete Semico...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
BGY80; BGY81 CATV amplifier modules
Product specification File under Discrete Semiconductors, SC16 February 1995
Philips Semiconductors
Philips Semiconductors
Product specification
CATV amplifier modules
FEATURES Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction TiPtAu metallized crystals ensure optimal reliability. DESCRIPTION Hybrid amplifier modules for CATV systems operating over a frequency range of 40 to 450 MHz at a voltage supply of (DC). The BGY80 is intended for use as a 12.5 dB pre-amplifier and the BGY81 as a 12.5 dB final amplifier. QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER power gain total current consumption (DC) BGY80 BGY81 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vi Tstg Tmb RF input voltage storage temperature operating mounting base temperature PARAMETER − −40 −20 MIN. CONDITIONS f = 50 MHz f = 450 MHz VB = 24 V − − MIN. 12 12.5 − − PINNING - SOT115J PIN 1 2 3 5 7 8 9 input common common +VB common common output DESCRIPTION
fpage
BGY80; BGY81
1
2
3
8 5 7 9
Side view
MSA319
Fig.1 Simplified outline.
TYP.
MAX. 13 14 200 240
UNIT dB dB mA mA
180 220
MAX. 65 +100 +100 °C °C
UNIT dBmV
February 1995
2
Philips Semiconductors
Product specification
CATV amplifier modules
CHARACTERISTICS Bandwidth 40 to 450 MHz; VB = 24 V; Tmb = 30 °C; ZS = ZL = 75 Ω. SYMBOL Gp SL FL S11 PARAMETER power gain slope cable equivalent fl...
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