BGY80

DISCRETE SEMICONDUCTORS DATA SHEET BGY80; BGY81 CATV amplifier modules Product specification File under Discrete Semiconductors, SC16 February 1995 Philips Semiconductors Philips Semiconductors Product specification CATV amplifier modules FEATURES Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction TiPtAu metallized crystals ensure optimal reliability. DESCRIPTION Hybrid amplifier modules for CATV systems operating over a frequency range of 40 to 450 MHz at a voltage supply of (DC). The BGY80 is intended for use as a 12.5 dB pre-amplifier and the BGY81 as a 12.5 dB final amplifier. QUICK REFERENCE DATA SYMBOL Gp Itot PARAMETER power gain total current consumption (DC) BGY80 BGY81 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vi Tstg Tmb RF input voltage storage temperature operating mounting base temperature PARAMETER − −40 −20 MIN. CONDITIONS f = 50 MHz f = 450 MHz VB = 24 V − − MIN. 12 12.5 − − PINNING - SOT115J PIN 1 2 3 5 7 8 9 input common common +VB common common output DESCRIPTION fpage BGY80; BGY81 1 2 3 8 5 7 9 Side view MSA319 Fig.1 Simplified outline. TYP. MAX. 13 14 200 240 UNIT dB dB mA mA 180 220 MAX. 65 +100 +100 °C °C UNIT dBmV February 1995 2 Philips Semiconductors Product specification CATV amplifier modules CHARACTERISTICS Bandwidth 40 to 450 MHz; VB = 24 V; Tmb = 30 °C; ZS = ZL = 75 Ω. SYMBOL Gp SL FL S11 PARAMETER power gain slope cable equivalent fl...