LS4118

Linear Integrated Systems LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET FEATURES LOW POWER IDSS<90 µA (2N4117) MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1) -40V Gate-Current 50mA Total Device Dissipation (Derate 2mW/°C to 175°C) Storage Temperature Range Lead Temperature (1/16" from case for 10 seconds) 300mW -65°C to +175°C 255°C G D 2 1 SD Case G 3 4 SC TO-72 Bottom View ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 2N4117/A 2N4118 FN4117/A 2N4118A SYMBOL CHARACTERISTICS MIN MAX MIN MAX IGSS Gate Reverse Current Standard only -- -10 -- -10 -- -25 -- -25 IGSS Gate Reverse Current "A" Series only -- -1 -- -1 -- -2.5 -- -2.5 BVGSS Gate-Source Breakdown Voltage -40 -- -40 -- VGS(off) Gate-Source Cutoff Voltage -0.6 -1.8 -1 -3 IDSS Saturation Drain Current 0.03 0.09 0.08 0.24 (NOTE 2) FN4117/A 0.015 ...