LS4148

Silicon Epitaxial Planar Diodes LS4148.LS4448 Features D Electrical data identical with the devices 1N4148 and 1N4448 respectively D Quadro Melf package Applications Extreme fast switches 96 12009 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation Junction temperature Storage temperature range Test Conditions tp=1ms VR=0 Type Symbol VRRM VR IFSM IFRM IF IFAV PV Tj Tstg Value 100 75 2 500 300 150 500 175 –65...+175 Unit V V A mA mA mA mW °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W TELEFUNKEN Semiconductors Rev. A2, 24-Jun-96 1 (4) LS4148.LS4448 Characteristics Tj = 25_C Parameter Forward voltage Reverse current Breakdown voltage Diode capacitance Rectification efficiency Reverse recovery time Test Condit...