RB551V-30

Schottky Barrier Diode RB551V-30 lApplication High frequency rectification lDimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 Datasheet lLand size figure (Unit : mm) 0.9MIN. 1.7±0.1 2.5±0.2 0.8MIN. 2.1 lFeatures 1) Small mold type. (UMD2) 2) Low VF 3) High reliability. lConstruction Silicon epitaxial planar UMD2 lStructure 0.3±0.05 0.7±0.2 　　　 0.1 ROHM : UMD2 JEITA : SC-90/A JEDEC :SOD-323 dot (year week factory) lTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φf11..5555±00.0.055 Cathode Anode 0.3±0.1 3.5±0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1 1.40±0.1 4.0±0.1 φf11..0055 1.0±0.1 lAbsolute maximum ratings (Ta= 25°C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) VRM VR Average rectified forward current Io Forward current surge peak (60Hz・1cyc) IFSM Junction temperature Tj Storage temperature Tstg Limits 30 20 500 2 125 -40 to +125 Unit V V mA A °C °C lElectrical characteristics (Ta = 25°...