SD106WS

Production specification Silicon Epitaxial Planar Diode FEATURES  Low turn-on voltage  Fast switching Pb Lead-free  This device is protected by a PN junction guard ring against excessive voltage,such as electrostatic discharge  Ideal for precaution of MOS device ,steering ,biasing , and coupling diodes for fast switching and low logic level application  Microminiature plastic package SD106WS SOD-323 APPLICATIONS  High speed switching ORDERING INFORMATION Type No. Marking SD106WS S21 Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Non-Repetitive Peak reverse voltage VRM 30 Peak forward Current IFM 200 Forward surge current @tp=10ms IFSM 1 Power dissipation Ptot 250 Thermal resistance junction to ambient air RθjA 500 Junction temperature Tj 150 Storage temperature TSTG -65 to +150 Unit V mA A mW ℃/W ℃ ℃ B026 Rev.A www.gmesemi.com 1 Production specification Silicon Epitaxi...