Document
128Mb, 256Mb NOR Flash and 128Mb, 512Mb LPDDR MCP Features
NOR Flash with Mobile LPDDR 133-Ball MCP
M39L0Rx0x0U3
Features
Multichip Package
• One die of 128Mb or 256Mb (MUX I/O, multiple bank, multilevel interface, burst) Flash memory
• One die of 128Mb or 512Mb LPDDR • Supply voltages:
– VDDF = VDDQF = 1.7–1.95V – VPPF = 9V for fast program – VDDD = VDDQD = 1.7–1.95V • Electronic signature: – Manufacturer code: 20h – Top device codes:
M58LR128KC = 882Eh M58LR256KC = 881Ch – Bottom device codes: M58LR128KD = 882Fh M58LR256KD = 881Dh • 133-ball VFBGA package – RoHS-compliant
Flash Memory
• Multiplexed address/data • Synchronous/asynchronous read
– Synchronous burst read mode: 66 MHz – Random access: 70ns • Synchronous burst read suspend • Programming time – 2.5µs typical word program time using buffer
enhanced factory program command • Memory organization
– Multiple bank memory array: 16Mb banks – Parameter blocks (top or bottom location.