M39L0R8070U3ZE6E

128Mb, 256Mb NOR Flash and 128Mb, 512Mb LPDDR MCP Features NOR Flash with Mobile LPDDR 133-Ball MCP M39L0Rx0x0U3 Features Multichip Package One die of 128Mb or 256Mb (MUX I/O, multiple bank, multilevel interface, burst) Flash memory One die of 128Mb or 512Mb LPDDR Supply voltages: – VDDF = VDDQF = 1.7–1.95V – VPPF = 9V for fast program – VDDD = VDDQD = 1.7–1.95V Electronic signature: – Manufacturer code: 20h – Top device codes: M58LR128KC = 882Eh M58LR256KC = 881Ch – Bottom device codes: M58LR128KD = 882Fh M58LR256KD = 881Dh 133-ball VFBGA package – RoHS-compliant Flash Memory Multiplexed address/data Synchronous/asynchronous read – Synchronous burst read mode: 66 MHz – Random access: 70ns Synchronous burst read suspend Programming time – 2.5µs typical word program time using buffer enhanced factory program command Memory organization – Multiple bank memory array: 16Mb banks – Parameter blocks (top or bottom location...