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MT38M4041A3034EZZI.XK6 Dataheets PDF



Part Number MT38M4041A3034EZZI.XK6
Manufacturers Micron
Logo Micron
Description Parallel NOR and PSRAM 56-Ball MCP Combination Memory
Datasheet MT38M4041A3034EZZI.XK6 DatasheetMT38M4041A3034EZZI.XK6 Datasheet (PDF)

56-Ball MCP: 256Mb/512Mb Parallel NOR and 128Mb PSRAM Features Parallel NOR and PSRAM 56-Ball MCP Combination Memory MT38M4041A3034EZZI.XK6 MT38M5041A3034EZZI.XR6 Features • Micron® Parallel NOR Flash and PSRAM components • RoHS-compliant, “green” package • Multiplexed address/data bus • Deep power-down (DPD) mode on both devices – NOR: 2μA (TYP) – PSRAM: 10μA (TYP) • Space-saving multichip package (MCP) • Low-voltage operation (1.70–1.95V) • Industrial temperature range: –40°C to +85°C NOR Fla.

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Document
56-Ball MCP: 256Mb/512Mb Parallel NOR and 128Mb PSRAM Features Parallel NOR and PSRAM 56-Ball MCP Combination Memory MT38M4041A3034EZZI.XK6 MT38M5041A3034EZZI.XR6 Features • Micron® Parallel NOR Flash and PSRAM components • RoHS-compliant, “green” package • Multiplexed address/data bus • Deep power-down (DPD) mode on both devices – NOR: 2μA (TYP) – PSRAM: 10μA (TYP) • Space-saving multichip package (MCP) • Low-voltage operation (1.70–1.95V) • Industrial temperature range: –40°C to +85°C NOR Flash-Specific Features • 256Mb or 512Mb multiple-bank, Parallel NOR Flash • Synchronous/asynchronous read – Synchronous burst reads: 133 MHz (266MB/sec) – Random access times: 96ns • Programming times – 2.0 μs/word (TYP) buffered programming – 0.9 s/block (TYP) for block erase – 20μs (TYP) program/erase suspend – 10μs by word (TYP) for fast factory program – Double/quadruple word program option • Memory blocks – Multiple bank memory array: .


MT38W2011A501ZQXZI.X68 MT38M4041A3034EZZI.XK6 MT38M5041A3034EZZI.XR6


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