SILICON EPITAXIAL S CHOTTKY BARRIER DIODE
1SS389
SILICON EPITAXIAL S CHOTTKY BARRIER DIODE High Speed Switching Application
Features
• Low forward voltage: VF =...
Description
1SS389
SILICON EPITAXIAL S CHOTTKY BARRIER DIODE High Speed Switching Application
Features
Low forward voltage: VF = 0.23V (typ.) @IF=5mA
PINNING
PIN 1 2
DESCRIPTION Cathode Anode
12
SW
Absolute Maximum Ratings (T j = 25? )
Parameter Maximum (peak) Reverse Voltage Reverse Voltage Maximum (peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range
Top View
Marking Code: "SW"
Simplified outline SOD-523 and symbol
Symbol VRM VR IFM IO IFSM Ptot TJ Ts Topr
Value 15 10 200 100 1 150 125
-55 to +125 -40 to +100
Unit V V mA mA A
mW ? ? ?
Characteristics at T j = 25 ?
Parameter Forward Voltage
Reverse Current Total Capacitance
Test Conditions IF = 1mA IF = 5mA IF = 100mA VR = 10V f = 1MHZ
Symbol VF VF VF IR CT
Min -
Typ 0.18 0.23 0.35
20
Max -
0.30 0.50 20 40
Unit V V V µA pF
РАДИОТЕХ
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