BLF242

DISCRETE SEMICONDUCTORS DATA SHEET BLF242 HF/VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES High power gain Low noise Easy power control Good thermal stability Withstands full load mismatch Gold metallization ensures excellent reliability. 2 3 MSB057 BLF242 PIN CONFIGURATION halfpage 1 4 d g MBB072 s DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common s...