BLF248

DISCRETE SEMICONDUCTORS DATA SHEET BLF248 VHF push-pull power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability. DESCRIPTION 5 5 3 Top view BLF248 PIN CONFIGURATION 1 halfpage 2 d2 g2 g1 d1 MBB157 s Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. PINNING - SOT262 A1 PIN 1 2 3 4 5 DESCRIPTION drain 1 drain 2 gate 1 gate 2 source 4 MSB008 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domes...