EB13003M

SY semiconductors Shenzhen SY Semiconductors Co. LTD. EB SERIES TRANSISTORS FEATURES APPLICATION EB13003M Absolute Maximum Ratings (Tc=2 PARAMETER Collector–Base Voltage Collector–Emitter Voltage Emitter –Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PC Tj Tstg VALUE 700 400 9 2.0 45 150 -65-150 UNI T V V V A W Electronic Characteristics (Tc=25 CHARACTERISTICS SYMBOL Collector–Base Cutoff Current ICBO Collector–Emitter Cutoff Current ICEO Collector–Emitter Voltage VCEO Emitter –Base Voltage VEBO Collector–Emitter Saturation Vcesat Voltage Base–Emitter Saturation Voltage Vbesat DC Current Gain HFE Storage Time Falling Time Ts TEST CONDITION VCB=700v VCE=400v IC=10mA IB=0 IE=1mA IC=0 IC=0.5A IB=0.1A IC=1.5A IB=0. 5A IC=0.5A IB=0.1A VCE=5v IC=1mA VCE=10v IC=0.5A VCE=5v IC=2.0A VCC=5V IC=0.25A MIN 400 9 7 10 5 2.0 MAX 100 250 0.4 0.6 1.2 UNI T V V V V V 40 4.0 1.0 ...