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BLF276 Dataheets PDF



Part Number BLF276
Manufacturers NXP
Logo NXP
Description VHF power MOS transistor
Datasheet BLF276 DatasheetBLF276 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BLF276 VHF power MOS transistor Product specification December 1997 Philips Semiconductors Product specification VHF power MOS transistor FEATURES • High power gain • Easy power control • Good thermal stability DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output power of 100 W in class-B operation at a supply voltage of 50 V. Th.

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DISCRETE SEMICONDUCTORS DATA SHEET BLF276 VHF power MOS transistor Product specification December 1997 Philips Semiconductors Product specification VHF power MOS transistor FEATURES • High power gain • Easy power control • Good thermal stability DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output power of 100 W in class-B operation at a supply voltage of 50 V. The transistor is encapsulated in a 6-lead, SOT119 pill-package envelope, with a ceramic cap. PINNING - SOT119D3 PIN 1 2 3 4 5 6 DESCRIPTION source source gate drain source source WARNING Product and environmental safety - toxic materials page BLF276 PIN CONFIGURATION 1 2 d 3 4 g MBB072 s 5 Top view MSA308 6 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 225 108 VDS (V) 50 50 PL (W) 100 100 GP (dB) ≥ 13 ≥ 18 ηD (%) ≥ 50 ≥ 60 December 1997 2 Philips Semiconductors Product specification VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS ±VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 °C CONDITIONS − − − − −65 − MIN. BLF276 MAX. 110 20 9 150 150 200 UNIT V V A W °C °C THERMAL RESISTANCE SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base CONDITIONS Ptot = 150 W; Tmb = 25 °C THERMAL RESISTANCE max. 1.17 K/W handbook, halfpage 10 MRA936 MRA943 240 handbook, halfpage Ptot (W) 200 ID (A) (1) (2) (2) 160 (1) 1 120 80 40 10−1 1 10 0 102 VDS (V) 103 0 20 40 60 80 100 120 140 Tmb (°C) (1) Current is this area may be limited by RDS(on). (2) Tmb = 25 °C. (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. Fig.3 Power/temperature derating curves. December 1997 3 Philips Semiconductors Product specification VHF power MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance on.


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