BLF544

DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLF544 UHF power MOS transistor Product specification Supersedes data of October 1992 1998 Jan 21 Philips Semiconductors Product specification UHF power MOS transistor FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability Designed for broadband operation. APPLICATIONS Communication transmitters in the UHF frequency range. handbook, halfpage BLF544 PINNING - SOT171A PIN 1 2 3 4 5 6 SYMBOL s s g d s s source source gate drain source source DESCRIPTION 2 4 6 d DESCRIPTION N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange. A marking code showing gate-source voltage (VGS) information is provided for matched pair applications. g 1 Top view 3 5 MAM390 s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source class-B circuit. MODE OF OPERATION CW, class-B CW, class-B f (MHz) 500 960 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. VDS (V) 28 28 PL (W) 20 20 Gp (dB) >11 typ. 7 ηD (%) >50 typ. 50 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely s...