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BLF647 Dataheets PDF



Part Number BLF647
Manufacturers NXP
Logo NXP
Description UHF power LDMOS transistor
Datasheet BLF647 DatasheetBLF647 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 800 MHz) • Internal input damping for excellent stability over the whole frequency range. A.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 800 MHz) • Internal input damping for excellent stability over the whole frequency range. APPLICATIONS • Communication transmitter applications in the HF to 800 MHz frequency range. 3 4 MBK777 BLF647 PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source, connected to flange DESCRIPTION 1 2 5 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 600 f1 = 600; f2 = 600.1 VDS (V) 28 28 PL (W) 120 120 (PEP) Top view Fig.1 Simplified outline. Gp (dB) >14.5 >14.5 ηD (%) >55 >40 dim (dBc) − ≤−26 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. Tmb ≤ 25 °C CONDITIONS − − − − −65 − MIN. MAX. 65 ±15 18 290 +150 200 V V A W °C °C UNIT 2001 Nov 27 2 Philips Semiconductors Product specification UHF power LDMOS transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 °C; Ptot = 290 W BLF647 VALUE 0.6 0.2 UNIT K/W K/W CHARACTERISTICS Tj = 25 °C per section unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Ciss Coss Crss Note 1. Capacitance values of the die only. PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 1.4 mA VDS = 20 V; ID = 140 mA VGS = 0; VDS = 28 V VGS = VGSth + 9 V; VDS = 10 V VGS = ±15 V; VDS = 0 VDS = 20 V; ID = 4 A VGS = VGSth + 9 V; ID = 4 A VGS = 0; VDS = 28 V; f = 1 MHz; note 1 VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 4 − 18 − − − − − − TYP. − − − − − 4 160 80 43 6 MAX. − 5.5 1.2 − 25 − − − − − UNIT V V µA A nA S mΩ pF pF pF MGW546 handbook, halfpage 100 Coss (pF) 80 60 40 20 0 0 10 20 30 40 50 VDS (V) VGS = 0; f = 1 MHz; Tj = 25 °C. Fig.2 Output capacitance as a function of drain-source voltage; typical values per section. 2001 Nov 27 3 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.2 K/W, unless otherwise specified. MODE OF OPERATION CW, class-AB 2-tone, class-AB CW, class-AB 2-tone, class-AB f (MHz) 600 f1 = 600; f2 = 600.1 800 f1 = 800; f2 = 800.1 VDS (V) 28 28 32 32 PL (W) 120 120 (PEP) 150 150 (PEP) Gp (dB) >14.5 >14.5 typ. 12.5 typ. 13 ηD (%) >55 >40 typ. 60 typ. 45 dim (dBc) − ≤−26 − typ. −30 Ruggedness in class-AB operation The BLF647 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; f = 100 MHz at rated load power. The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions. Impedances (per section) At f = 600 MHz, PL = 120 W, VDS = 28 V and IDQ = 1 A: Zin = 1.0 + j2.0 Ω and ZL = 2.7 + j0.7 Ω. At f = 800 MHz, PL = 150 W, VDS = 32 V and IDQ = 1 A: Zin = 1.0 + j3.8 Ω and ZL = 1.8 + j0.7 Ω. 2001 Nov 27 4 Philips Semiconductors Product specification UHF power LDMOS transistor Application at 600 MHz MGW540 BLF647 MGW541 handbook, halfpage 20 80 Gp handbook, halfpage 0 Gp (dB) 15 ηD (%) 60 dim (dBc) − 20 d3 ηD 10 40 − 40 d5 5 20 − 60 0 0 50 100 150 PL (PEP) (W) 0 200 − 80 0 50 100 150 PL (PEP) (W) 200 Th = 25 °C; VDS = 28 V; IDQ = 1 A. 2-tone: f1 = 600 MHz (−6 dB); f2 = 600.1 MHz (−6 dB) measured in 600 MHz test circuit. Th = 25 °C; VDS = 28 V; IDQ = 1 A. 2-tone: f1 = 600 MHz (−6 dB); f2 = 600.1 MHz (−6 dB) measured in 600 MHz test circuit. Fig.3 Power gain and drain efficiency as functions of peak envelope load power; typical values. Fig.4 Intermodulation distortion as a function of peak envelope output power; typical values. MGW542 handbook, halfpage 20 .


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