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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D392
BLF647 UHF power LDMOS transistor
Product specification Supersedes data of 2001 Aug 02 2001 Nov 27
Philips Semiconductors
Product specification
UHF power LDMOS transistor
FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 800 MHz) • Internal input damping for excellent stability over the whole frequency range. APPLICATIONS • Communication transmitter applications in the HF to 800 MHz frequency range.
3 4
MBK777
BLF647
PINNING - SOT540A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source, connected to flange DESCRIPTION
1
2
5
DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 600 f1 = 600; f2 = 600.1 VDS (V) 28 28 PL (W) 120 120 (PEP)
Top view
Fig.1 Simplified outline.
Gp (dB) >14.5 >14.5
ηD (%) >55 >40
dim (dBc) − ≤−26
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. Tmb ≤ 25 °C CONDITIONS − − − − −65 − MIN. MAX. 65 ±15 18 290 +150 200 V V A W °C °C UNIT
2001 Nov 27
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 °C; Ptot = 290 W
BLF647
VALUE 0.6 0.2
UNIT K/W K/W
CHARACTERISTICS Tj = 25 °C per section unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Ciss Coss Crss Note 1. Capacitance values of the die only. PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 1.4 mA VDS = 20 V; ID = 140 mA VGS = 0; VDS = 28 V VGS = VGSth + 9 V; VDS = 10 V VGS = ±15 V; VDS = 0 VDS = 20 V; ID = 4 A VGS = VGSth + 9 V; ID = 4 A VGS = 0; VDS = 28 V; f = 1 MHz; note 1 VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 4 − 18 − − − − − − TYP. − − − − − 4 160 80 43 6 MAX. − 5.5 1.2 − 25 − − − − − UNIT V V µA A nA S mΩ pF pF pF
MGW546
handbook, halfpage
100
Coss (pF) 80
60
40
20
0 0 10 20 30 40 50 VDS (V)
VGS = 0; f = 1 MHz; Tj = 25 °C.
Fig.2
Output capacitance as a function of drain-source voltage; typical values per section.
2001 Nov 27
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF647
APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.2 K/W, unless otherwise specified. MODE OF OPERATION CW, class-AB 2-tone, class-AB CW, class-AB 2-tone, class-AB f (MHz) 600 f1 = 600; f2 = 600.1 800 f1 = 800; f2 = 800.1 VDS (V) 28 28 32 32 PL (W) 120 120 (PEP) 150 150 (PEP) Gp (dB) >14.5 >14.5 typ. 12.5 typ. 13 ηD (%) >55 >40 typ. 60 typ. 45 dim (dBc) − ≤−26 − typ. −30
Ruggedness in class-AB operation The BLF647 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; f = 100 MHz at rated load power. The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions. Impedances (per section) At f = 600 MHz, PL = 120 W, VDS = 28 V and IDQ = 1 A: Zin = 1.0 + j2.0 Ω and ZL = 2.7 + j0.7 Ω. At f = 800 MHz, PL = 150 W, VDS = 32 V and IDQ = 1 A: Zin = 1.0 + j3.8 Ω and ZL = 1.8 + j0.7 Ω.
2001 Nov 27
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
Application at 600 MHz
MGW540
BLF647
MGW541
handbook, halfpage
20
80 Gp
handbook, halfpage
0
Gp (dB) 15
ηD (%)
60
dim (dBc) − 20 d3
ηD
10 40
− 40
d5
5
20
− 60
0 0 50 100 150 PL (PEP) (W)
0 200
− 80
0
50
100
150 PL (PEP) (W)
200
Th = 25 °C; VDS = 28 V; IDQ = 1 A. 2-tone: f1 = 600 MHz (−6 dB); f2 = 600.1 MHz (−6 dB) measured in 600 MHz test circuit.
Th = 25 °C; VDS = 28 V; IDQ = 1 A. 2-tone: f1 = 600 MHz (−6 dB); f2 = 600.1 MHz (−6 dB) measured in 600 MHz test circuit.
Fig.3
Power gain and drain efficiency as functions of peak envelope load power; typical values.
Fig.4
Intermodulation distortion as a function of peak envelope output power; typical values.
MGW542
handbook, halfpage
20
.