Document
SEMICONDUCTOR
TECHNICAL DATA
KTB2234
EPITAXIAL PLANAR PNP TRANSISTOR
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. POWER SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION.
FEATURES ᴌHigh DC Current Gain
: hFE=200(Min.) (VCE=-2V, IC=-1A) ᴌLow Saturation Voltage
: VCE(sat)=-1.5V(Max.) (IC=-1A, IB=-1mA) ᴌComplementary to KTD2854.
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Peak
Base Current
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC ICP IB PC Tj
Storage Temperature Range
Tstg
RATING -100 -100 -8 -2 -3 -0.5 1 150
-55ᴕ150
UNIT V V V
A
A W ᴱ ᴱ
BD
G JA R
P DEPTH:0.2
C
Q K
FF
HH M EM
123
HL
NN 1. EMITTER 2. COLLECTOR 3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX S C 0.60 MAX
D 2.50 MAX
E 1.15 MAX F 1.27
G 1.70 MAX
H 0.55 MAX J 14.00+_ 0.50
H
K L
0.35 MIN 0.75+_ 0.10
M4
N 25
O 1.25
P Φ1.50
Q 0.10 MAX R 12.50 +_ 0.50
S 1.0.