BLL1214-250

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor FEATURES High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS L-band radar applications in the 1200 to 1400 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange. Top view handbook, halfpage BLL1214-250 PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 2 3 MBK394 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Pulsed class-AB; tp = 1 ms; δ = 10% f (MHz) 1200 to 1400 VDS (V) 36 IDQ (mA) 150 PL (W) 250 Gp (dB) >12 ηD (%) >42 pulse droop (dB) <0.6 tr (ns) <100 tf (ns) <100 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage total power dissipation storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Phil...