RB715F

Schottky Barrier Diode FEATURES  Extra small power mold type.  Low VF.  High reliability. Pb Lead-free Production specification RB715F APPLICATIONS  General purpose application. ORDERING INFORMATION Type No. Marking RB715F 3D SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Peak reverse voltage Diode reverse voltage VRM 40 VR 40 V V Average forward current IF 30 mA Forward Surge Current t=1μS IFS 200 mA Power Dissipation Pd 150 mW Junction temperature Tj 125 ℃ Storage temperature range Tstg -40 to +125 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR= 100μA 40 V Reverse voltage leakage current IR VR=10V 1 μA Forward voltage Diode capacitance VF IF=1mA CD VR=1V f=1MHz 370 mV 2.0 pF F027 Rev.A www.gmesemi.com 1 Production specification Schottky Barrier Dio...