DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D259
BLS3135-50 Microwave power transistor
Product specification S...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D259
BLS3135-50 Microwave power
transistor
Product specification Supersedes data of 1998 Apr 06 1999 Aug 16
Philips Semiconductors
Product specification
Microwave power
transistor
FEATURES Suitable for short and medium pulse applications Internal input and output matching networks for an easy circuit design Emitter ballasting resistors improve ruggedness Gold metallization ensures excellent reliability Interdigitated emitter-base structure provides high emitter efficiency Multicell geometry improves power sharing and reduces thermal resistance.
handbook, halfpage
BLS3135-50
PINNING - SOT422A PIN 1 2 3 collector emitter base; connected to flange DESCRIPTION
1
APPLICATIONS Common base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz band. DESCRIPTION
NPN silicon planar epitaxial microwave power
transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common base class-C test circuit. MODE OF OPERATION Pulsed, class-C f (GHz) 3.1 to 3.5 VCB (V) 40 PL (W) 50 Gp (dB) typ. 8 ηC (%) typ. 40
3 2 3
MBK051
Fig.1 Simplified outline.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aw...