BLT80

DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor FEATURES SMD encapsulation Gold metallization ensures excellent reliability. APPLICATIONS Hand-held radio equipment in the 900 MHz communication band. b handbook, halfpage BLT80 4 c DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 2 3 e MAM043 - 1 PINNING - SOT223 PIN 1 2 3 4 SYMBOL e b e c base emitter collector DESCRIPTION emitter Top view Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.7). MODE OF OPERATION CW, class-B narrow band f (MHz) 900 VCE (V) 7.5 PL (W) 0.8 Gp (dB) ≥6 ηC (%) ≥60 1996 May 09 2 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current peak collector current total power dissipation storage temperature operating junction temperature f > 1 MHz Ts = 131 °C; note 1 open base open collector CONDITIONS open emitter − − − − − − − −65 − MIN. MAX. 20 10 3 250 250 750 2 +150 175 BLT80 UNIT V V V mA mA mA W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-s Rth j-a P...