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DISCRETE SEMICONDUCTORS
DATA SHEET
BLU86 UHF power transistor
Product specification September 1991
Philips Semiconductors
Product specification
UHF power transistor
FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in mobile radio equipment in the 900 MHz communications band. PINNING - SOT223 PIN 1 2 3 4 DESCRIPTION emitter base emitter collector
1
Top view
MBB012
BLU86
QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit (see note 1). MODE OF OPERATION c.w. narrow band Note 1. Ts = temperature at soldering point of collector tab. PIN CONFIGURATION f (MHz) 900 VCE (V) 12.5 PL (W) 1 Gp (dB) >7 ηc (%) > 55
halfpage
4
c
handbook, halfpage
b
e
2
3
MSB002 - 1
Fig.1 Simplified outline and symbol.
September 1991
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Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC, IC(AV) ICM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation CONDITIONS open emitter open base open collector DC or average value peak value; f > 1 MHz f > 1 MHz; Ts = 129 °C (note 1) − − − − − − MIN.
BLU86
MAX. 32 16 3 200 600 2
UNIT V V V mA mA W
Tstg Tj Note
storage temperature range operating junction temperature
−65 −
150 175
°C °C
1. Ts = temperature at soldering point of collector tab.
3 10 handbook, halfpage
MRA241
IC (mA)
Ts = 129 oC 102
10 1 10 VCE (V)
102
Fig.2 DC SOAR.
THERMAL RESISTANCE SYMBOL Rth j-s(DC) PARAMETER from junction to soldering point CONDITIONS Ptot = 2 W; Ts = 129 °C 23 MAX. K/W UNIT
September 1991
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Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 °C. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE ESBR PARAMETER collector-base breakdown voltage collector-emitter breadown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain second breakdown energy CONDITIONS open emitter; IC = 2.5 mA open base; IC = 10 mA open collector; IE = 0.5 mA VBE = 0; VCE = 16 V VCE = 10 V; IC = 150 mA L = 25 mH; RBE = 10 Ω; f = 50 Hz VCB = 12.5 V; IE = Ie = 0; f = 1 MHz VCE = 12.5 V; IC = 0; f = 1 MHz MIN. 32 16 3 − 25 0.3 TYP. − − − − − −
BLU86
MAX. UNIT − − − 1 − − mJ V V V mA
CC
collector capacitance
−
2.2
2.6
pF
Cre
feedback capacitance
−
1.2
1.8
pF
MRA237
100 handbook, halfpage hFE 80 10 V 60 VCE = 12.5 V
MRA234
5 handbook, halfpage Cc (pF) 4
3
40
2
20
1
0 0 200 400 IC (mA) 600
0
0
5
10
VCB (V)
15
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Collector capacitance as a function of collector-base voltage, typical values.
September 1991
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Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Ts ≤ 60 °C; in a common emitter class-B test circuit (see note 1). MODE OF OPERATION c.w. narrow band Note 1. Ts = temperature at soldering point of collector tab. 900 f (MHz) 12.5 VCE (V) 1 PL (W) Gp (dB) >7 typ. 7.7
BLU86
ηc (%) > 55 typ. 66
MRA235
MRA240
handbook, 10 halfpage
100 GP
GP (dB) 8
ηc (%)
80
2 handbook, halfpage PL (W) 1.5
6
ηc
60 1
4
40 0.5
2
20
0 0
0.4
0.8
1.2 PL (W)
0 1.6
0
0
100
200
300
400 500 PIN (mW)
Class-B operation; VCE = 12.5 V; f = 900 MHz.
Class-B operation; VCE = 12.5 V; f = 900 MHz.
Fig.5
Gain and efficiency as functions of load power, typical values.
Fig.6
Load power as a function of drive power, typical values.
Ruggedness in class-B operation The BLU86 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases at rated output power, up to a supply voltage of 15.5 V, f = 900 MHz and Ts ≤ 60 °C, where Ts is the temperature at the soldering point of the collector tab.
September 1991
5
Philips Semiconductors
Product specification
UHF power transistor
BLU86
handbook, full pagewidth
50 Ω input
C1
,,,,
L1 L2 C2 L5 R1 L6
TUT
C3
,,,,
L3 L4 L7 C4 L8 C7 R2 C8
C6
50 Ω output
C5
+VCC C9
MBC090
Fig.7 Class-B test circuit at f = 900 MHz.
List of components (see test circuit) COMPONENT C1, C6 C2, C3, C4, C5 C7 C8 C9 L1 L2 L3 L4 L5, L7 L6, L8 R1, R2 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are mounted on a double copper-clad printed circuit board, with PTFE fiber-glass dielectric (εr = 2.2); thickness 1⁄16 inch. DESCRIPTION multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) 63 V electrolytic capacitor stripline (note 2) stripline (note 2) stripline (note 2) stripline (note 2) 6 turns e.