BLU97

DISCRETE SEMICONDUCTORS DATA SHEET BLU97 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 470 MHz band. FEATURES multi-base structure and emitter-ballasting resistors for an optimum temperature profile. gold metallization ensures excellent reliability. BLU97 The transistor has a 4-lead stud envelope with a ceramic cap (SOT122A). All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w. PIN CONFIGURATION VCE V 12,5 f MHz 470 PL W 7 Gp dB > 8,5 PINNING - SOT122A. PIN 1 2 handbook, halfpage ηC % > 55 DESCRIPTION collector emitter base emitter 4 1 3 3 4 2 Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation at Tmb = 52 °C f > 1 MHz; Tmb = 52 °C Storage temperature Operating junc...