DISCRETE SEMICONDUCTORS
DATA SHEET
BLU99 BLU99/SL UHF power transistor
Product specification March 1993
Philips Semico...
DISCRETE SEMICONDUCTORS
DATA SHEET
BLU99 BLU99/SL UHF power
transistor
Product specification March 1993
Philips Semiconductors
Product specification
UHF power
transistor
DESCRIPTION N-P-N silicon planar epitaxial
transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The
transistor is also very suitable for application in the 900 MHz mobile radio band. FEATURES multi-base structure and diffused emitter-ballasting resistors for an optimum temperature profile; gold metallization ensures excellent reliability. The BLU99 has a 4-lead stud envelope with a ceramic cap (SOT122A). All leads are isolated from the stud. The BLU99/SL is a studless version (SOT122D). QUICK REFERENCE DATA R.F. performance at Th = 25 °C in a common-emitter class-B circuit. MODE OF OPERATION narrow band; c.w. VCE V 12,5 12,5 f MHz 470 900 PL W 5 4 > typ. Gp dB
BLU99 BLU99/SL
ηC % 10,5 > 7,0 typ. 60 60
PIN CONFIGURATION
PINNING - SOT122A; SOT122D PIN
fpage
DESCRIPTION collector emitter base emitter
4
1 2 3 4
age
4 1 3 1 3
2 Top view
MBK187
2
MSB055
Fig.1
Simplified outline. SOT122A (BLU99).
Fig.2
Simplified outline. SOT122D (BLU99/SL).
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
March 1993
2
Philips Semiconductors
Product specification
UHF power
transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Coll...