DISCRETE SEMICONDUCTORS
DATA SHEET
BLV100 UHF power transistor
Product specification March 1993
Philips Semiconductors...
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV100 UHF power
transistor
Product specification March 1993
Philips Semiconductors
Product specification
UHF power
transistor
FEATURES Internal input matching to achieve high power gain Ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability.
1 2 4 6
MBB012
BLV100
PIN CONFIGURATION
halfpage
c
handbook, halfpage
DESCRIPTION
NPN silicon planar epitaxial
transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The
transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. PINNING - SOT171 PIN 1 2 3 4 5 6 DESCRIPTION emitter emitter base collector emitter emitter
3 5
b
e
Top view
MBA931 - 1
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance up to Th = 25 °C in a common emitter class-AB test circuit. MODE OF OPERATION c.w. class-AB f (MHz) 960 VCE (V) 24 PL (W) 8 G...