BLV2045N

DISCRETE SEMICONDUCTORS DATA SHEET M3D171 BLV2045N UHF power transistor Preliminary specification Supersedes data of 1999 May 01 2000 Feb 21 Philips Semiconductors Preliminary specification UHF power transistor FEATURES Emitter ballasting resistors for optimum temperature profile Gold metallization ensures excellent reliability Internal input and output matching for an easy design of wideband circuits. APPLICATIONS Common emitter class-AB operation in PCN and PCS applications in the 1800 to 2000 MHz frequency range. DESCRIPTION 2 BLV2045N PINNING - SOT390A PIN 1 2 3 SYMBOL c b e base emitter, connected to flange DESCRIPTION collector handbook, halfpage 1 3 NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. Top view MSA470 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 1990 f1 = 1990.0; f2 = 1990.1 VCE (V) 26 26 PL (W) 35 35 (PEP) Gp (dB) typ. 9.5 ≥9.5 ηC (%) typ. 43 ≥33 dim (dBc) − ≤−30 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature Tmb = 25 °C CONDITIONS open emitter open base ...