Document
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D372
BLV2047 UHF power transistor
Product specification Supersedes data of 1999 Jan 28 1999 Jun 09
Philips Semiconductors
Product specification
UHF power transistor
FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output matching for easy design of wideband circuits • AlN substrate package for environmental safety. APPLICATIONS
handbook, halfpage
BLV2047
PINNING - SOT468A PIN 1 2 3 collector base emitter; connected to flange DESCRIPTION
1
• Common emitter class-AB operation for PCN (Personal Communication Networks) and PCS (Personal Communication Services) base station applications in the 1800 to 2000 MHz frequency range.
Top view
3 2
MBK200
DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 2000 f1 = 2000.0; f2 = 2000.1 VCE (V) 26 26 PL (W) 60 60 (PEP) Gp (dB) ≥8.5 ≥9 ηC (%) ≥40 ≥33 dim (dBc) − ≤−30
Fig.1 Simplified outline.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Tmb = 25 °C CONDITIONS open emitter open base open collector MIN. − − − − − −65 − MAX. 65 27 3 10 270 +150 200 UNIT V V V A W °C °C
1999 Jun 09
2
Philips Semiconductors
Product specification
UHF power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. Thermal resistance is determined under specified RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre Note 1. Capacitance of die only. PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 40 mA open base; IC = 120 mA open collector; IE = 40 mA VCE = 26 V; VBE = 0 VCE = 10 V; IC = 4 A VCB = 26 V; IE = ie = 0; f = 1 MHz; note 1 VCE = 26 V; IC = 0; f = 1 MHz MIN. 65 27 3 − 45 − − TYP. − − − − − 72 41 PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Ptot = 270 W; Tmb = 25 °C; note 1
BLV2047
VALUE 0.65 0.25
UNIT K/W K/W
MAX. UNIT − − − 8 100 − − pF pF V V V mA
handbook, halfpage
120
MBK396
handbook, halfpage
160
MBK397
hFE
Cre (pF) 120
80
80
40
40
0 0 2 4 6 8 IC (A) 10
0 0 10 20 VCB (V) 30
VCE = 10 V.
f = 1 MHz.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Feedback capacitance as a function of collector-base voltage; typical values.
1999 Jun 09
3
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB CDMA, class-AB Note f (MHz) 2000 f1 = 2000.0 f2 = 2000.1 2000 VCE (V) 26 26 26 ICQ (mA) 300 300 500 PL (W) 60 60 (PEP) 12.5 Gp (dB) ≥8.5 ≥9 typ. 9 ηC (%) ≥40 ≥33
BLV2047
dim (dBc) − ≤−30 ≤−46(1)
typ. 22
1. CDMA test signal with peak to average ratio of 11.9 dB. Adjacent Channel Power (ACP) is measured at ±885 kHz offset from the centre of the channel (2000 MHz) using a spectrum analyzer with the resolution set to 30 kHz. Ruggedness in class-AB operation The BLV2047 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the following conditions: f1 = 2000.0 MHz; f2 = 2000.1 MHz; VCE = 26 V; ICQ = 300 mA; PL = 60 W (PEP); Tmb = 25 °C.
handbook, G halfpage
12 p (dB) 10
MBK398
60
ηC
handbook, halfpage
100
MBK399
Gp
(%) 50
PL (W) 80
(1) (2) (3)
8
ηC
40
60
6
30
40
4
20
20
2
10
0 0 20 40 60 80
0 100 PL (W)
0 0 4 8 PD (W) 12
VCE = 26 V; ICQ = 300 mA; f = 2000 MHz.
ICQ = 300 mA; f = 2000 MHz. (1) VCE = 28 V. (2) VCE = 26 V. (3) VCE = 24 V.
Fig.4
Power gain and collector efficiency as a function of load power; typical values.
Fig.5
Load power as a function of drive power; typical values.
1999 Jun 09
4
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
handbook, halfpage
10
MBK400
Gp (dB) 8
Gp
50
ηC (%)
handbook, halfpage
0
MBK401
d3
(dBc) −10
40
ηC
6 30 −20
(1)
(2)
4
20
−30
(3)
2
10
−40
0 0 20 40 60
0 80 100 PL (PEP)(W)
−50
0
20
40
60 80 PL (PEP)(W)
VCE = 26 V; ICQ = 300 mA; f1 = 2000 MHz; f2 = 2000.1 MHz.
VCE = 26 V; f1 = 2000 MHz; f2 = 2000.1 MHz. (1) ICQ = 100 mA. (2) ICQ = 300 mA. (3) ICQ = 500 mA.
Fig.6
Power gain and collector efficiency as functions of peak envelope load power; typical values.
Fig.7
Intermodulation prod.