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BLV2047 Dataheets PDF



Part Number BLV2047
Manufacturers NXP
Logo NXP
Description UHF power transistor
Datasheet BLV2047 DatasheetBLV2047 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D372 BLV2047 UHF power transistor Product specification Supersedes data of 1999 Jan 28 1999 Jun 09 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output matching for easy design of wideband circuits • AlN substrate package for environmental safety. APPLICATIONS handbook, halfpage BLV2047 PINNIN.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D372 BLV2047 UHF power transistor Product specification Supersedes data of 1999 Jan 28 1999 Jun 09 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output matching for easy design of wideband circuits • AlN substrate package for environmental safety. APPLICATIONS handbook, halfpage BLV2047 PINNING - SOT468A PIN 1 2 3 collector base emitter; connected to flange DESCRIPTION 1 • Common emitter class-AB operation for PCN (Personal Communication Networks) and PCS (Personal Communication Services) base station applications in the 1800 to 2000 MHz frequency range. Top view 3 2 MBK200 DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 2000 f1 = 2000.0; f2 = 2000.1 VCE (V) 26 26 PL (W) 60 60 (PEP) Gp (dB) ≥8.5 ≥9 ηC (%) ≥40 ≥33 dim (dBc) − ≤−30 Fig.1 Simplified outline. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Tmb = 25 °C CONDITIONS open emitter open base open collector MIN. − − − − − −65 − MAX. 65 27 3 10 270 +150 200 UNIT V V V A W °C °C 1999 Jun 09 2 Philips Semiconductors Product specification UHF power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. Thermal resistance is determined under specified RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre Note 1. Capacitance of die only. PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 40 mA open base; IC = 120 mA open collector; IE = 40 mA VCE = 26 V; VBE = 0 VCE = 10 V; IC = 4 A VCB = 26 V; IE = ie = 0; f = 1 MHz; note 1 VCE = 26 V; IC = 0; f = 1 MHz MIN. 65 27 3 − 45 − − TYP. − − − − − 72 41 PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Ptot = 270 W; Tmb = 25 °C; note 1 BLV2047 VALUE 0.65 0.25 UNIT K/W K/W MAX. UNIT − − − 8 100 − − pF pF V V V mA handbook, halfpage 120 MBK396 handbook, halfpage 160 MBK397 hFE Cre (pF) 120 80 80 40 40 0 0 2 4 6 8 IC (A) 10 0 0 10 20 VCB (V) 30 VCE = 10 V. f = 1 MHz. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Feedback capacitance as a function of collector-base voltage; typical values. 1999 Jun 09 3 Philips Semiconductors Product specification UHF power transistor APPLICATION INFORMATION RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB CDMA, class-AB Note f (MHz) 2000 f1 = 2000.0 f2 = 2000.1 2000 VCE (V) 26 26 26 ICQ (mA) 300 300 500 PL (W) 60 60 (PEP) 12.5 Gp (dB) ≥8.5 ≥9 typ. 9 ηC (%) ≥40 ≥33 BLV2047 dim (dBc) − ≤−30 ≤−46(1) typ. 22 1. CDMA test signal with peak to average ratio of 11.9 dB. Adjacent Channel Power (ACP) is measured at ±885 kHz offset from the centre of the channel (2000 MHz) using a spectrum analyzer with the resolution set to 30 kHz. Ruggedness in class-AB operation The BLV2047 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the following conditions: f1 = 2000.0 MHz; f2 = 2000.1 MHz; VCE = 26 V; ICQ = 300 mA; PL = 60 W (PEP); Tmb = 25 °C. handbook, G halfpage 12 p (dB) 10 MBK398 60 ηC handbook, halfpage 100 MBK399 Gp (%) 50 PL (W) 80 (1) (2) (3) 8 ηC 40 60 6 30 40 4 20 20 2 10 0 0 20 40 60 80 0 100 PL (W) 0 0 4 8 PD (W) 12 VCE = 26 V; ICQ = 300 mA; f = 2000 MHz. ICQ = 300 mA; f = 2000 MHz. (1) VCE = 28 V. (2) VCE = 26 V. (3) VCE = 24 V. Fig.4 Power gain and collector efficiency as a function of load power; typical values. Fig.5 Load power as a function of drive power; typical values. 1999 Jun 09 4 Philips Semiconductors Product specification UHF power transistor BLV2047 handbook, halfpage 10 MBK400 Gp (dB) 8 Gp 50 ηC (%) handbook, halfpage 0 MBK401 d3 (dBc) −10 40 ηC 6 30 −20 (1) (2) 4 20 −30 (3) 2 10 −40 0 0 20 40 60 0 80 100 PL (PEP)(W) −50 0 20 40 60 80 PL (PEP)(W) VCE = 26 V; ICQ = 300 mA; f1 = 2000 MHz; f2 = 2000.1 MHz. VCE = 26 V; f1 = 2000 MHz; f2 = 2000.1 MHz. (1) ICQ = 100 mA. (2) ICQ = 300 mA. (3) ICQ = 500 mA. Fig.6 Power gain and collector efficiency as functions of peak envelope load power; typical values. Fig.7 Intermodulation prod.


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